8
RF Device Data
Freescale Semiconductor
MRFE6S9201HR3 MRFE6S9201HSR3
TYPICAL CHARACTERISTICS
400
16 0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 1400 mA
f = 880 MHz
TC
= ?30
C
25C
60
85C
10
23
22
21
20
19
C
50
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
100
?30C
25C
85
18
17
1
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD
= 24 V
G
ps
, POWER GAIN (dB)
350
18
22
0
19
20
21
IDQ
= 1400 mA
f = 880 MHz
50 100 200150 250 300
28 V
32 V
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
= 28 Vdc, P
out
= 40 W Avg., and
ηD
= 31.3%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
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